| PART |
Description |
Maker |
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SMBT2222AE6327HTSA1 |
Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SA1980UF |
Low collector saturation voltage. Low output capacitance.
|
TY Semiconductor Co., Ltd
|
| 2SD1999 |
Low saturation voltage. Contains diode between collector and emitter.
|
TY Semiconductor Co., L...
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| 2SD1691 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
Unisonic Technologies
|
| 2SB906 |
Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
| 2SB798 |
Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA)
|
TY Semiconductor Co., Ltd
|
| 2SD1624 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| 2SA1730 |
Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| SMBT2907A07 |
PNP Silicon Switching Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| DP100 |
Extremely low collector-to-emitter saturation voltage
PNP Silicon Transistor
|
KODENSHI KOREA CORP.
AUK corp
|
