| PART |
Description |
Maker |
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| 2DI75M-120 |
POWER TRANSISTER MODULE
|
http://
FUJI[Fuji Electric]
|
| 2SD2478 2SB1616 |
MEDIUM POWER TRANSISTER
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MRF21120R6 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor...
Freescale Semiconductor, Inc
|
| MTM15N45 MTM15N50 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF1511NT1 MRF1511T1 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MTP30N08M |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| ATC100B6R8BT500XT ATC100B0R3BT500XT ATC100B0R8BT50 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF373R1 MRF373SR1 |
RF POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc
|
