| PART |
Description |
Maker |
| ARF448B ARF448A ARF448 |
N-CHANNEL ENHANCEMENT MODE
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| VP0300LS VP0300L VQ2001P VQ2001J 70217 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V，夹断电0.6A的P沟道增强型MOSFET)
From old datasheet system
P-Channel Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
| CMLDM7002A CMLDM7002AJ |
SMD Small Signal Mosfet Dual N-Channel Enhancement Mode
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
CENTRAL[Central Semiconductor Corp]
|
| IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| TN2010T |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电00V，夹断电.12AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET Transistor
|
Vishay Intertechnology,Inc.
ETC
|
| 2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET
N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor
List of Unclassifed Manufacturers
|
| STP7NB60FP STP7NB60 5325 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET -通道增强型MOSFET的PowerMESH
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
ST Microelectronics
STMicroelectronics
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V，夹断电0.18A的P沟道增强型MOSFET晶体
From old datasheet system
P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
