| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| TMP95FW54A |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
|
Toshiba
|
| TMP93PW44A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93CU76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| 2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK2768-01L 2SK2654-01 2SK2647-01MR |
3.5 A, 900 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15
|
|
| 2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| FCD900N60Z |
N-Channel SuperFETII MOSFET 600 V, 4.5 A, 900 m
|
Fairchild Semiconductor
|
| FML11N90 |
11Amps 900 Voltage N Channel MOSFET
|
First Components Intern...
|
| 5N90G-TA3-T 5N90G-TF3-T 5N90L-TF3-T 5N90L-TA3-T |
5 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| IPW90R120C3 |
36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| 2N90L-TN3-R 2N90G-TN3-R 2N90G-TF3-T 2N90L-TF3-T |
2 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
|
