| PART |
Description |
Maker |
| PS21963-AT PS21963-CT PS21963-T PS21963-TW |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PS21962-T09 PS21962-AT PS21962-CT PS21962-T PS2196 |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-4 PS21962-4A PS21962-4C PS21962-4W PS21962 |
Dual-In-Line Package Intelligent Power Module
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-4S PS21962-4S09 |
Dual-In-Line Package Intelligent Power Module
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-AT PS21962-CT PS21962-T PS21962-TW |
00V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| BTA10-600B BTA10-600BW BTA10-600C BTA10-600CW BTA1 |
10A triac, 600V
Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55
10A TRIACS 10A条双向可控硅
10A triac, 800V
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| PS21963-EST |
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21965-ST |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
| STGP10NC60H P10NC60H |
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH IGBT
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STD11NM60N STF11NM60N STB11NM60N-1 STP11NM60N STD1 |
N-channel 600V - 0.37楼? - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
