| PART |
Description |
Maker |
| UPD444008L UPD444008LLE-A10 UPD444008LLE-A12 UPD44 |
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT 4分位CMOS快速静态存储器12k - Word8
512K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
|
NEC, Corp.
Unisonic Technologies Co., Ltd.
NEC Corp.
|
| MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119
512K X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC
Motorola, Inc
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| N08M1618L1AW N08M1618L1A N08M1618L1AB N08M1618L1AB |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit
512K X 16 STANDARD SRAM, 150 ns, PBGA48 BGA-48
|
AMI[AMI SEMICONDUCTOR]
Unisonic Technologies Co., Ltd.
|
| 89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16 |
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位）立方米的SRAM
|
Maxwell Technologies, Inc
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| P4C1048L-70CWI P4C1048L-45PMB P4C1048L-45SMB P4C10 |
LOW POWER 512K x 8 CMOS STATIC RAM 低功率为512k × 8的CMOS静态RAM
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, CDIP32
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| 33LV408RPFS-30 33LV408 33LV408RPFB-20 33LV408RPFB- |
4 Megabit (512K x 8-Bit) CMOS SRAM
|
MAXWELL[Maxwell Technologies]
|
| GX60N60C2D1 |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
|
IXYS CORP
|
| LY6251216 LY6251216E LY6251216GL LY6251216GV LY625 |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62W51216GL-55LLI LY62W51216GL-55SLI LY62W51216GL |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
|
