PART |
Description |
Maker |
RM1200E11 RM2000E-TP RM1500E |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts 0.5 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AC 500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
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Micro Commercial Components Micro Commercial Compon...
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1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V. High speed high conductance diode. Working inverse voltage 175 V. General purpose low diode. Working inverse voltage 100V. 500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). General purpose low diode. Working inverse voltage 200V. General Purpose Diodes
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
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OP954 |
PIN Sili con Pho todiode
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OPTEK Technologies ETC Optek Technology
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RF1S4N100SM RFP4N100 FN2457 |
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs From old datasheet system
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INTERSIL[Intersil Corporation]
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PBHV9040T09 |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 500 0.25安PNP高电压低饱和压降(BISS) 晶体 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
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NXP Semiconductors N.V.
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AD5325BRMZ-REEL7 AD5340 AD5341 AD5342 AD5300 AD533 |
2.5 V to 5.5 V, 500 µA, 2-Wire Interface Quad Voltage Output 12-Bit DAC in a 10-Lead MicroSOIC Package; Package: MSOP; No of Pins: 10; Temperature Range: Industrial SERIAL INPUT LOADING, 8 us SETTLING TIME, 12-BIT DAC, PDSO10 2.5 V to 5.5 V, 500 μA, 2-Wire Interface Interface 2.5 V to 5.5 V, 500 muA, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs 2.5 V to 5.5 V, 500 A, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs 2.5 V to 5.5 V, 500 μA, 2-Wire Interface Interface
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Analog Devices, Inc.
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TR0081F |
1 AMP, 500 Volts High Voltage PNP Transistor
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Solid States Devices, Inc
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ST500A7.51 ST500A9.1V T00023D T00023D-15 |
500 W Transient Voltage Suppressor 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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Solid States Devices, Inc SOLID STATE DEVICES INC Solid States Devices, I...
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PBHV8540T |
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
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NXP Semiconductors
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