PART |
Description |
Maker |
GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
|
IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM) 4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
A0A19 |
Super Low Power Slow SRAM - 8Mb
|
Hynix Semiconductor
|
MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
MT58L256L36D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
Micron Technology
|
N08L163WC2C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
N08L1618C2AB2 N08L1618C2A N08L1618C2AB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N08L163WC1CT1-55IL N08L163WC1C N08L163WC1CT1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N08T1630C1BT N08T1630CXB N08T1630C1BT2 N08T1630C1B |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
|
http:// NANOAMP[NanoAmp Solutions, Inc.]
|
N08L163WC2CZ1-55IL N08L163WC2C N08L163WC2CZ1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|