| PART |
Description |
Maker |
| MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V，P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| MMBF2202PT1 MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
Power MOSFET 300 mAmps / 20 Volts P−Channel SC/SOT�
|
ON Semiconductor
|
| LBSS84LT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| BSS138LT1 |
N-CHANNEL POWER MOSFET
Power MOSFET 200 mAmps, 50 Volts
|
WILLAS ELECTRONIC CORP
|
| RLP1N06CLE |
1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,电压箝位,电流限定,N沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
| MMBF0201NLT1 MMBF0201NL MMBF0201NLT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| MMBF2201NT1G MMBF2201NT106 MMBF2201NT1 |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| APT752R4BN-GULLWING |
5.5 A, 750 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
|
| 2N7000RLRPG 2N7000G 2N7000ZL1G |
Small Signal MOSFET 200 mAmps 60 Volts
|
ON Semiconductor
|
