| PART |
Description |
Maker |
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| IBM13M16734BCA |
16M x 72 1-Bank Registered SDRAM Module(16M x 72 1组寄存同步动态RAM模块)
|
IBM Microeletronics
|
| KMM53216004BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM53216000BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF |
16M-bit(16M-word x 1-bit) Fast SRAM
|
NEC
|
| MB8516SR72CA-103LDG MB8516SR72CA-102DG MB8516SR72C |
16M x 72Bit Synchronous DRAM DIMM
16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
|
Fujitsu Component Limited.
Fujitsu Limited
|
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
