| PART |
Description |
Maker |
| HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) 256M超过16057型快闪记忆体部门71299072位）
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| HN29V25611AT-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
| HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
HITACHI[Hitachi Semiconductor]
|
| K9E2G08B0M-FIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G |
256M x 8 Bits NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX25L25735E MX25L25735EMI12G MX25L25735EZNI12G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| K9K2G0816QU0M |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W25Q256FVEIQ W25Q256FVBIF W25Q256FVBIG W25Q256FVCI |
3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
