| PART |
Description |
Maker |
| 1S2 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere)
|
Panjit International Inc
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| SF1602GA SF1602GD SF1604GD SF1604GA |
(SF1601GA - SF1608GA) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
(SF1601G - SF1608G) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
(SF1601GD - SF1608GD) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
|
Thinki Semiconductor
|
| SF2004GD SF2005G SF2005GD SF2005GA SF2001G SF2006G |
(SF2001GD - SF2008GD) 20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode
(SF2001G - SF2008G) 20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode
(SF2001GA - SF2008GA) 20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode
|
Thinki Semiconductor
|
| 1N4001GP 1N4007GP 1N4006GP 1N4004GP 1N4005GP |
1.0 Ampere Glass Passivated Rectifiers(骞冲??存?1瀹??????????????娴??)
1.0 Ampere Glass Passivated Rectifiers(平均整流1安培的玻璃钝化结型整流器) 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0 Ampere Glass Passivated Rectifiers(平均整流1安培的玻璃钝化结型整流器) 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| MJD47 MJD47T4 MJD50 ON2006 MJD50-1 MJD50T4 MJD47-1 |
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 / 400 VOLTS 15 WATTS
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS 1 A, 400 V, NPN, Si, POWER TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 400 VOLTS 15 WATTS
DPAK For Surface Mount Applications
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semiconductor
|
| MJ10009 MJ10009_D ON1969 |
From old datasheet system
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| ES3A-ES3D ES3A |
3.0 Ampere Superfast Rectifiers
|
Fairchild Semiconductor
|
| GBU4D GBU4M GBU4K GBU4G GBU4B GBU4J GBU4A |
4.0 Ampere Bridge Rectifiers
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 2KBP005M_3N253 2KBP01M_3N254 2KBP02M_3N255 2KBP04M |
2.0 Ampere Bridge Rectifiers
|
Fairchild Semiconductor
|
| GBU8K GBU8A GBU8B GBU8D GBU8G GBU8J |
8.0 Ampere Bridge Rectifiers
|
FAIRCHILD[Fairchild Semiconductor]
|
| MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS
From old datasheet system
20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor
Motorola, Inc
|
