PART |
Description |
Maker |
MB84SD23280FA-70PBS MB84SD23280E-70PBS MB84SD23280 |
64M (X16) FLASH MEMORY 8M (X16) SRAM PQ II HIP 7 REV A NO-PB SPECIALTY MEMORY CIRCUIT, PBGA73 PLASTIC, FBGA-73
|
Spansion Inc. Spansion, Inc.
|
MB84SD23280E-70PBS MB84SD23280EFE-70 |
64M (X16) FLASH MEMORY 8M (X16) SRAM
|
AMD
|
MX26L6419TC-10 MX26L6419 |
64M [x16] SINGLE 3V PAGE MODE MTP MEMORY
|
MCNIX[Macronix International]
|
MX26F640J3XCC-10 MX26F640J3 MX26F640J3TC-10 |
64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
M36DR432DA10ZA6T |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
http://
|
K8D6316UBM-TI08 K8D638UTM-DI09 K8D638UTM-FC09 K8D6 |
4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
http://
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
K8D6316UTM-PC07 K8D6316UTM-PC08 K8D6316UTM-PC09 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
M36DR232A M36DR232B M36DR232BZA M36DR232 M36DR232A |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32 MBIT (2MB X16, DUAL BANK, PAGE) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
K8S6415EBB-DE7C K8S6415EBB-DC7C K8S6415EBB-FE7C K8 |
64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
|
http://
|
M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|