| PART |
Description |
Maker |
| LBSS84WT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| LBSS138WT1G |
Power MOSFET 200 mAmps, 50 Volts
|
Leshan Radio Company
|
| RF1K49221 FN4314 |
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETPower MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET?Power MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET
2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RF1K49093 FN3969 |
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFETPower MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A 12V 0.130 Ohm Logic Level Dual P-Channel LittleFET Power MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET
2.5A/ 12V/ 0.130 Ohm/ Logic Level/ Dual P-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23
|
ON Semiconductor
|
| MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V，P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
| BSV52LT1 BSV52L BSV52LT1-D BSV52LT1/D |
Switching Transistor (NPN Silicon)
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
|
ON Semiconductor
|
| RF1K49092 FN3968 |
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
From old datasheet system
3.5A/2.5A 12V 0.050/0.130 Ohm Logic Level Complementary LittleFET Power MOSFET
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| SS14T3 |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
|
