| PART |
Description |
Maker |
| LTC1957-2 LTC1957-1EMS8 LTC1957-2EMS LTC1957-1 LTC |
Single/Dual Band RF Power Controllers with 40dB Dynamic Range
Single/Dual Band RF Power Controllers with 40dB Dynamic Range and 370kHz Loop Bandwidth
AMP POWER CONTROLLER
|
Linear Technology
|
| MAX2267 MAX2267EUE MAX2268EUE MAX2269EUE MAX2268 M |
2.7V / Single-Supply / Cellular-Band Linear Power Amplifiers
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers 887 MHz - 925 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers 2.7V、单电源、蜂窝频段线性功率放大器
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| LTC1757A-1EMS8 LTC1757A-2EMS LTC1757A-1 LTC1757A-2 |
Single/Dual Band RF Power Controllers
|
Linear Technology Corporation
LINER[Linear Technology]
|
| Q62702G0077 CGY0918 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| NE5534AF NE5534AN NE5534FE NE5534N SA5534 SA5534A |
Dual and single low noise op amp OP-AMP, 5000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDSO8
Dual and single low noise op amp OP-AMP, 5000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDIP8
Dual and single low noise op amp DUAL OP-AMP, 4000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDIP14
|
PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| ISL55290IUZ-T13 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp DUAL OP-AMP, 500 uV OFFSET-MAX, 800 MHz BAND WIDTH, PDSO10
|
Intersil, Corp.
|
| LQP03TN12NJ04 AN26032A LQP03TN8N2H04 GRM33B30J104K |
Ultra small , Single Band LNA-IC with Band-limiting filter for 600 MHz Band Applications
|
Panasonic Battery Group
|
