| PART |
Description |
Maker |
| LT3514EUFDTRPBF |
Triple Step-Down Switching Regulator with 100% Duty Cycle Operation
|
Linear Technology
|
| W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
| AT34C02B |
2K, 2-wire Bus Serial EEPROM with permanent software write protection and reversible software write protection.
|
Atmel
|
| ADXL210E ADXL210JE ADXL210AE ADXL210 |
0 g Dual Axis Accelerometer with Duty Cycle Outputs
ADXL210E: Low-Cost 10 g Dual-Axis Accelerometer with Duty Cycle Data Sheet (Rev. 0. 5/02)
|
AD[Analog Devices]
|
| 24C04A |
The 24C04A is a 4K bit Serial Electrically Erasable PROM. The 24C04A features an I2C™ compatible 2-wire serial interface bus and hardware write protection for the upper half of the block. The 24C04A has a page write capabil
|
Microchip
|
| DS28E10P DS28E10RT DS28E10PT DS28E1011 CAT1021YI-3 |
1-Wire SHA-1 Authenticator Irreversible Write Protection
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保
|
Maxim Integrated Products
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| SSI32R511-8F SSI32R516-6CH SSI32R516-6CL SSI32R516 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
API Delevan
|
| XR-511R-4D XR-511-6CP XR-511-6CJ XR-511-6D XR-511R |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
Linear Technology, Corp.
|
| MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW.
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW.
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| MAX1836 MAX1836EUT33 MAX1836EUT33-T MAX1836EUT50 M |
CHOKE COIL 100UH 600MA SMD
24V Internal Switch / 100% Duty Cycle / Step-Down Converters
From old datasheet system
DC/DC CONVERTER, 3.3V,BICMOS,TSOP,6PIN
"24V Internal Switch, 100% Duty Cycle, Step-Down Converters"
|
Maxim Integrated Products, Inc.
Maxim Integrated Products Inc
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
