| PART |
Description |
Maker |
| PDPD431636L |
1M-Bit CMOS Synchronous Fast Static RAM(1M CMOS 同步快速静态RAM) 100万位CMOS同步快速静态RAM100万的CMOS同步快速静态内存）
|
NEC, Corp.
|
| PD464536L PD464518L |
4M-Bit Bi-CMOS Synchronous Fast Static RAM(4M BiCMOS 同步快速静态RAM)
|
NEC Corp.
|
| UPD44323362 UPD44323362F1-C40-FJ1 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC Corp.
|
| IDT74LVC161A 74LVC161A_DS_88829 IDT74LVC161AQ8 |
3.3V CMOS Preset Table Synchronous 4-Bit Binary Counter with Asynchronous Reset, 5.0V Tolerant I/O
From old datasheet system
3.3V CMOS PRESETTABLE SYNCHRONOUS 4-BIT BINARY COUNTER
|
IDT
|
| FM93C66A FM93C66AE FM93C66AV 93C66 FM93C66AL |
4K-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
4K-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
From old datasheet system
4K-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus)
|
FAIRCHILD[Fairchild Semiconductor]
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100
Replaced by PTH12000W :
|
MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| FM93C56 FM93C56E FM93C56V FM93C56TL |
From old datasheet system
2048-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
2048-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
2048-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
|
FAIRCHILD[Fairchild Semiconductor]
|
| HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode)
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
| MB8504S064AC-100 MB8504S064AC-84 MB8504S064AC-67 |
CMOS 4M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64位同步动态RAM)
|
Fujitsu Limited
|
| MB8501S064AC-100 MB8501S064AC-67 MB8501S064AC-84 |
CMOS 1M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64同步动态RAM)
|
Fujitsu Limited
|
| MB81117422A-125 |
CMOS 2×2M ×4 Bit
Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步动态RAM)
|
Fujitsu Limited
|
