PART |
Description |
Maker |
SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道,低Qg,快速开WFET,超低开关损 N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
SI4300DY SI4300DY-TI |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
VISAY[Vishay Siliconix]
|
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
SI7458DP |
N-Channel 20-V (D-S) Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
SI7804DN SI7804DN-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
SI7806BDN-T1-E3 SI7806BDN |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
UTM6006G-K08-5060-R UTM6006G-S08-R |
N-CHANNEL FAST SWITCHING MOSFET
|
Unisonic Technologies
|
SI7342DP |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay
|
SI4890DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|