| PART |
Description |
Maker |
| 24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM
From old datasheet system
CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| KM28C64A KM28C65A |
8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM
|
Samsung Electronic
Samsung semiconductor
|
| AM2404INA AM24LC02 AM24LC16 AM2404IN AM2404IS AM24 |
2-Wire Serial 4K-Bit (512 x 8) CMOS Electrically Erasable PROM
|
ANACHIP[Anachip Corp]
|
| HS-6664RH-T |
Radiation Hardened 8K x 8 CMOS PROM(抗辐射CMOS 64K 可编程ROM)
|
Intersil Corporation
|
| W49L102P-70B W49L102Q-90 W49L102Q-90B W49L102Q-70 |
64K X 16 CMOS 3.3V FLASH MEMORY
MB 26C 26#20 SKT RECP
MB 4C 4#12 PIN RECP
MB 15C 14#20 1#16 PIN RECP
MB 19C 19#20 SKT RECP
MB 19C 19#20 PIN RECP
64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V电源供电的CMOS闪速存储器)
MB 26C 26#20 PIN RECP 64K X 16 FLASH 3.3V PROM, 90 ns, PDSO40
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM
128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| SST29EE512-70-4I-EHE SST29EE512-70-4C-EHE SST29EE5 |
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
http://
Silicon Storage Technology, Inc.
|
| 24LC22A 24LC22A-I/P 24LC22A-I/SN 24LC22AT-I/SN |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
2K VESA E - EDID SERIAL EEPROM
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ...
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| AT49F512-70TC AT49F512 AT49F512-70VC AT49F512-70VI |
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDSO32
Quadruple 2-Input Positive-NAND Gate 14-SSOP -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
512K 64K x 8 5-volt Only Flash Memory
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| BR24L16 BR24L16FJ-W BR24L16FVM-W BR24L16F-W BR24L1 |
2k8 bit electrically erasable PROM
2k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
