| PART |
Description |
Maker |
| 10EDB10 |
DIODE - 1A 100V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10EDB40 |
DIODE - 1A 400V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| CHTA30 CHTA35 |
HIGH TEMPERATURE 150C SERIES
|
List of Unclassifed Manufacturers
ETC
|
| 10DDA60 |
From old datasheet system
DIODE - 1A 600V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| P22-4R-C P10-10RHT6-L |
Ring Tongue Solderless Terminal; Wire Size (AWG):26-22; Stud Size:#4; Pack Quantity:100 COPPER ALLOY, TIN FINISH, RING TERMINAL
#12- #10 Barrel Non-Insulated Ring, Stud size #10, length-0.81", width-0.38, diameter-0.22", Temp rating max 150C, Material-Thick copper tin plated UL listed CSA certified COPPER ALLOY, NICKEL FINISH, RING TERMINAL
|
Panduit, Corp.
|
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| SLA5018 |
N-channel P-channel H-bridge 5 A, 60 V, 0.3 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| ISB-A27-0 |
150 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Ultrathin Miniature Package 4-channel N-channel MOSFET Array
|
Sanyo Semicon Device
|
| 3N191 X3N190-91 3N190 3N190-91 X3N191 |
50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
30V N-Channel PowerTrench MOSFET
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
|
Calogic LLC
Calogic LLC
CALOGIC[Calogic, LLC]
|
| HI-506A07 HI3-0508A-5Z |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil Corporation
|
|
