PART |
Description |
Maker |
HYB514256BJL-70 HYB514256BJL-60 HYB514256BJL-50 HY |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group] Infineon
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HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics Samsung Semiconductor Co., Ltd.
|
M38503E4SS M38503MXH M37516RSS M38504E6FP M38504E6 |
RAM size:768 bytes; single-chip 8-bit CMOS microcomputer RAM size:896 bytes; single-chip 8-bit CMOS microcomputer RAM size:192 bytes; single-chip 8-bit CMOS microcomputer RAM size:256 bytes; single-chip 8-bit CMOS microcomputer Single Chip 8-Bit CMOS Microcomputer 3850 Series Microcontrollers: General Purpose with A/D Converter RAM size:1536 bytes; single-chip 8-bit CMOS microcomputer RAM size:640 bytes; single-chip 8-bit CMOS microcomputer RAM size:384 bytes; single-chip 8-bit CMOS microcomputer RAM size:512 bytes; single-chip 8-bit CMOS microcomputer RAM size:1024 bytes; single-chip 8-bit CMOS microcomputer RAM size:2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业闪存兆位56亩16位),静态存储器
|
Advanced Micro Devices, Inc.
|
K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
MB8116165B-50 MB8116165B-60 |
1 M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超级页面存取模式动态RAM) 1 M ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ?16浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM) 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
HYB314400BJ-50- HYB314400BJ-60 |
1M x 4-Bit Dynamic RAM 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
|
SIEMENS AG
|
MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM From old datasheet system 1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
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