PART |
Description |
Maker |
ZL50111GAG2 |
128, 256 and 1024 Channel CESoP Processors SPECIALTY TELECOM CIRCUIT, PBGA552
|
Zarlink Semiconductor, Inc.
|
MBM29F200BA |
2 M (256 K ×8/128 K ×16) BIT Flash Memory(2 M (256 K ×8/128 K ×16)V 电源电压闪速存储器) 2米(256亩8 / 128亩16)位闪存米(256亩8 / 128亩16)位V的电源电压闪速存储器
|
Fujitsu, Ltd.
|
S29PL256N65FAWW02 S29PL129N65FAWW00 S29PL256N65FAW |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION[SPANSION]
|
PCF8594C-2 PCF8594C-2P PCF8594C-2T PCF8598C-2 PCF8 |
256 to 1024 x 8-bit CMOS EEPROMs with I2C-bus interface PCF85xxC-2 family 256 to 1024 ? 8-bit CMOS EEPROMs with I2C-bus interface
|
PHILIPS[Philips Semiconductors] Integrated Circuit Systems
|
IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位,每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM,具有可编程写保护每个字节。(1024 × 8位,每个字节带可编程写保护的EEPROM中) 1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位,每个字节带可编程写保护,2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM,具有可编程写保护对于每一个字节,两个字节可编程保障法024 × 8位,每个字节带可编程写保护,2字节可编程安全密码的EEPROM中)
|
GTM, Corp. Integrated Silicon Solution, Inc.
|
29PL256N S29PL129N70GAW003 S29PL256N65GFWW03 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion Inc. Spansion, Inc.
|
BL93C56 |
2K bits (256 X 8 or 128 X 16)/ 4K bits (512 X 8 or 256 X 16) Three-wire Serial EEPROM
|
SHANGHAI BELLING CO., LTD.
|
IDT70T3589S-200DRI IDT70T3589S-133BF IDT70T3589S-1 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 15 ns, PQFP208 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 2.5V56/128/64K × 36 SYNCHRONOU S双,端口静态RAM.5V的接 HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
|
Integrated Device Technology, Inc.
|
AD5272BRMZ-20-RL7 AD5272BRMZ-100-RL7 AD5272BCPZ-20 |
1024-/256-Position, 1% Resistor Tolerance Error, I2C Interface and 50-TP Memory Digital Rheostat
|
Analog Devices
|
AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位)3.0伏的CMOS只,引导扇区快闪记忆体,修编模具1
|
Advanced Micro Devices, Inc.
|