PART |
Description |
Maker |
CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE SMD Switching Diode Dual: High Voltage: In Series
|
Central Semiconductor, Corp. Central Semiconductor Corp
|
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
MAX1745 MAX1745AUB MAX1745EUB MAX1744 MAX1744EUB M |
High-Voltage, Step-Down DC-DC Controller in uMAX High-Voltage, Step-Down DC-DC Controller in レMAX High-Voltage, Step-Down DC-DC Controller in ??AX High-Voltage Step-Down DC-DC Controller in MAX Replaced by TMS320C6410 : Digital Signal Processor 40-PDIP 0 to 70 High-Voltage, Step-Down DC-DC Controller in MAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10 High-Voltage, Step-Down DC-DC Controller in µMAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10 High-Voltage, Step-Down DC-DC Controller in MAX 高压、降压型DC-DC控制器,µMAX封装
|
MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
|
RM1200DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM1200DB-34S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM400DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
1SS397 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
BAS70-06S Q62702-A3469 BAS7006S |
From old datasheet system Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping)
|
http:// SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
NSVBAS21TMR6T1G NSVBAS21TMR6T2G |
High Voltage Switching Diode
|
ON Semiconductor
|