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MJ1502206 - Silicon Power Transistors

MJ1502206_742555.PDF Datasheet


 Full text search : Silicon Power Transistors
 Product Description search : Silicon Power Transistors


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D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
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BDX53B BD53C BDX54C ON0205 BDX53C BDX54B From old datasheet system
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Motorola Inc
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From old datasheet system
6 AMPERE POWER TRANSISTORS
POWER TRANSISTORS COMPLEMENTARY SILICON
Motorola Inc
MOTOROLA[Motorola, Inc]
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BC737 BC738 PNP SILICON AF MEDIUM POWER TRANSISTORS
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Micro Electronics
TIP142 TIP147 TIP146 TIP145 TIP141 TIP140 4132 Complemetary Silicon Power Darlington Transistors(浜?ˉ纭????揪??】?朵?绠?
From old datasheet system
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicro
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
Boca Semiconductor Corp.
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MJE4343 MJF4343 MJE4353 ON2037 From old datasheet system
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