PART |
Description |
Maker |
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
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Infineon Technologies AG
|
DPC-24-1000B20 DPC-10-1000B3 DPC-10-440B2 DPC-16-7 |
POWER TRANSFORMER, 24 VA POWER TRANSFORMER, 10 VA POWER TRANSFORMER, 4.4 VA POWER TRANSFORMER, 1.2 VA POWER TRANSFORMER, 1 VA Low Frequency, Open-Style Laminated Concentric Vertical Profile, PC Plug-In Series
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Pulse Electronics, Corp. PULSE ELECTRONICS CORP Pulse A Technitrol Company Pulse A Technitrol Comp...
|
2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
45912-0030 0459120030 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Signal, Power, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
AT73C203 |
Power Management IC for Datacom Platforms 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PBGA100 The AT73C203 is a low-cost, ultra low-power, power and battery management IC designed to interface directly with portable and hand-held applications built around microprocessors requiring smart power management functions. It includes all r
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Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
POWER-32D POWER-22D POWER-12D |
(POWER-12D/-22D/-32D) Low power off-line switching power supply control chip
|
Xin Ke
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
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ICE1QS01G |
Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor Correction (PFC)
|
Infineon Technologies AG
|
2SA886 2SA0886 |
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
2SD1252A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|