PART |
Description |
Maker |
NSDEMN11XV6T1 NSDEMN11XV6T5 NSDEMN11DXV6T1/D |
Small Signal Switching Diodes in SOT563 Common Cathode Quad Array Switching Diode Common Cathode Switching Diode 共阴极开关二极管
|
ONSEMI[ON Semiconductor]
|
KDS135 |
Switching Diode SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
CPD4110 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
BAW56 Q62702-A688 BAW56-BOXREELOF3K |
ER 3C 3#12 SKT PLUG 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE INVERTER 12V-INPUT 1700V-OUTPUT Programmable Skew Clock Buffer Silicon Switching Diode Array (For high-speed switching applications Common anode)
|
SIEMENS AG Siemens Group SIEMENS[Siemens Semiconductor Group]
|
1N3062 1N3064 1N3063 1N3062-15 |
SILICON SWITCHING DIODE 0.075 A, 75 V, SILICON, SIGNAL DIODE, DO-35 Leaded Silicon Diode Switching
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] Central Semiconductor C...
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|