| PART |
Description |
Maker |
| DTDG23YPFRA |
60V/1A Digital Transistor (with built-in resistor and zener diode)
|
Rohm
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| 2SB507 2SB507F |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
POWER TRANSISTORS(3.0A/60V/30W)
POWER TRANSISTORS(3.0A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| BFT70 BFX80 BFX36 BFX11 BFX79 BFX81 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-18
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-78
晶体管|晶体管|一对|互补| 60V的五（巴西）总裁| 600毫安一（c）|7
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 200MA I(C) | TO-77 晶体管|晶体管|一对|互补| 20V的五（巴西）总裁| 200mA的一（c）|7
|
TT electronics Semelab, Ltd.
|
| FA1F4Z FA1F4ZL65 FA1F4Z-L FA1F4Z-T2B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
TRANSISTOR | 60V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC Corp.
|
| 2N3804 2N4985 2N1650 2N2632 |
SILICON UNIDIRECTIONAL SWITCH|8.2V V(BO) MAX|300UA I(S)|TO-18
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 3A I(C) | STR-10
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|个STR - 10
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 50MA I(C) | TO-71 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 50mA的一（c）|1
|
Mitsubishi Electric, Corp.
Powerex, Inc.
|
| HUFA76432S3S HUFA76432P3 HUFA76432S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 55A条（丁）|63AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| BCR569 |
Digital Transistors - PNP Silicon Digital Transistor
PNP Silizium Digital Transistor
|
INFINEON[Infineon Technologies AG]
|
