| PART |
Description |
Maker |
| MDD56-08N1B MDD56-12N1B MDD56-14N1B MDD56-16N1B MD |
Diode Modules 71 A, 1800 V, SILICON, RECTIFIER DIODE, TO-240AA
CHOKE, DIFF/SYM MODE 2X55UH 2ACHOKE, DIFF/SYM MODE 2X55UH 2A; Inductance:55uH; Inductor type:Differential/Symmetrical; Current, DC max:2A; Resistance:0.07R; Case style:RS522; Frequency, resonant:7MHz; Voltage rating, AC:250V;
CHOKE, DIFF/SYM MODE 2X8UH 4ACHOKE, DIFF/SYM MODE 2X8UH 4A; Inductance:8uH; Inductor type:Differential/Symmetrical; Current, DC max:4A; Resistance:0.02R; Case style:RS614; Frequency, resonant:22MHz; Voltage rating, AC:250V; Approval
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| D2082UK D2082 |
TetraFET 40W - 28V - 1.0GHz
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| EIA5060-1S |
5.0-6.0GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| DDR-DRAM1024-3-EX DDR-DRAM1024-3LX DDR-DRAM128-3 D |
Intel Pentium M / Celeron M 1.0GHz - 1.8GHz
|
ADL Embedded Solutions
|
| MGFC36V4450A |
4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| TIM4450-16UL09 |
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM4450-4UL06 |
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM4450-8UL |
HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| ET9571 |
3-Ch. Diff. Amplifier-comparator
|
IC Haus
|
| AK8186B |
Multi Output Clock Generator with Integrated 2.0GHz VCO
|
Asahi Kasei Microsystems
|
| SY55851UKITR SY55851UKG SY55851AUKG SY55851AUKGTR |
2.5V/3V, 3.0GHz CML AnyGate ANY LOGIC WITH 50ohm or 100ohm OUTPUTS
|
MICREL[Micrel Semiconductor]
|
