PART |
Description |
Maker |
GS816236BGB-250V GS816218BGB-200V GS816236BGB-150V |
1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PBGA119 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA119 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
GS832272C-250I GS832218 GS832218B GS832218B-133 GS |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI Technology ETC[ETC]
|
CY7C1366B-200BZI ICY7C1367B-166BGI CY7C1366B CY7C1 |
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
CY7C1387D-167AXC CY7C1386D-167AXC |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM
|
Cypress
|
GS88218BGB-200V GS88236BB-250IV |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA119 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PBGA119
|
GSI Technology, Inc.
|
CY7C1366C06 CY7C1367C-250BGC CY7C1367C-250BGI CY7C |
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
GS88236BD-333I GS88218 GS88218BB-150 GS88218BB-150 |
9Mb Burst SRAMs 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|