| PART |
Description |
Maker |
| LH543601M-20 LH543601M-25 LH543601M-30 LH543601P-2 |
256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出
|
Sharp Corporation
Sharp, Corp.
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| MT8980 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) Non-blocking Digital Switch (DX)
|
Zarlink Semiconductor
|
| AT93C56AU3-10UU-1.8 AT93C56AD3-10DH-1.8 AT93C56AW- |
Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
| M48T35AY04 M48T35AV-10PC1E M48T35AV-10PC1F M48T35A |
REAL TIME CLOCK, PDSO28
5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER㈢ SRAM
5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER庐 SRAM
5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| SA3488 |
CMOS 256 X 256 DIGITAL SWITCHING MATRIX
|
SAMES[Sames]
|
| MT89L85 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) 3.3 V Non-blocking Enhance Digital Switch (EDX) with Constant Delay Mode
|
Zarlink Semiconductor
|
| AM24LC02 AM24LC02IN8 AM24LC02IN8A AM24LC02IS8 AM24 |
2-Wire Serial 2K-bits (256 x 8) CMOS Electrically Erasable PROM 2线串行的2K位（256 × 8）的CMOS电可擦除可编程ROM
RES POWER 10 OHM 1W 10% SMD 2线串行的2K位（256 × 8）的CMOS电可擦除可编程ROM
ECONOLINE: REC3-S_DR/H1 - 3W DIP Package- 1kVDC Isolation- Regulated Output- UL94V-0 Package Material- Continuous Short Circiut Protection- Internal SMD design- 100% Burned In- Efficiency to 75%
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| CY7C197BN-25PC CY7C197BN-15VC |
256-Kb (256 K x 1) Static RAM Fast access time: 15 ns
256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24
256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 25 ns, PDIP24
|
Cypress Semiconductor, Corp.
|
