| PART |
Description |
Maker |
| 2SD2098 |
NPN Silicon Epitaxial Planar Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| 1-1318114-4 |
Dynamic Series Connectors; DYNAMIC D-2100 TAB HSG 8P P/M ( AMP )
|
Tyco Electronics
|
| 1-1318117-3 |
Dynamic Series Connectors; DYNAMIC D-2100 TAB HSG 3P F/H ( AMP )
|
Tyco Electronics
|
| SI300-FS SI3000-KS SI3000-KSR SI3008-B-FS SI3000-C |
84 dB ADC Dynamic Range 84 dB DAC Dynamic Range 4?2 kHz Sample Rates 30 dB Microphone Pre-Amp
|
Silicon Laboratories Inc.
|
| OM200F120CMD |
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25 C unless otherwise specified)
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25 C unless otherwise specified)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| LVDS |
LVDS Description and Family Characteristics
LVDS Description and Family Characteristics
|
Fairchild Semiconductor Corporation
|
| IS41LV8512 IS41C8512 41C8512 IS41C8512-35K IS41C85 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
From old datasheet system
DYNAMIC RAM, EDO DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM
1048576 x 4 BIT DYNAMIC RAM
Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
|
http://
Toshiba Semiconductor
Toshiba Corporation
|
| MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM)
2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| HYB314400BJ-50- HYB314400BJ-60 |
1M x 4-Bit Dynamic RAM
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
|
SIEMENS AG
|
