| PART |
Description |
Maker |
| UPD44324082F5-E40-EQ2 UPD44324082F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| PD44324185BF5-E33-FQ1-A PD44324185BF5-E40-FQ1-A PD |
36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| PD46364185BF1-E40-EQ1 PD46364365BF1-E40-EQ1 PD4636 |
36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp.
NEC, Corp.
|
| UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| GS8330DW36 GS8330DW72 |
(GS8330DW36/72) 36M Double Late Write SRAM
|
GSI Technology
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
