| PART |
Description |
Maker |
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PM0805-3N3M-RC PM0805-10NM-RC PM0805-18NM-RC PM080 |
High Q Chip Inductors
Chip Inductor 1 ELEMENT, 0.0056 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD Inductor; Series:PM0805; Inductance:3.3nH; Inductance Tolerance: /- 20 %; Q Factor:50; Self Resonant Frequency:6GHz; Package/Case:0805; Terminal Type:PCB Surface Mount; Core Material:Ceramic; Current Rating:600mA
SMD Inductor; Series:PM0805; Inductance:6.8nH; Inductance Tolerance: /- 20 %; Q Factor:50; Self Resonant Frequency:5.5GHz; Package/Case:0805; Terminal Type:PCB Surface Mount; Core Material:Ceramic; Current Rating:600mA
|
Bourns Electronic Solutions
Bourns, Inc.
BOURNS INC
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| PM54-330L-RC BOURNSINC-PM54-470L-RC |
Power Inductor; Series:PM54; Inductance:33uH; Inductance Tolerance: /- 15 %; Self Resonant Frequency:16MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current Rating:880mA; Leaded Process Compatible:Yes
|
BOURNS INC
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| 15GN01SA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| VN920DSO VN920D-B513TR -VN920D-B513TR |
INDUCTOR, AXIAL, 220UH; Inductor type:Choke; Inductance:220uH; Tolerance, inductance: /-20%; Resistance:2.6R; Current, DC max:0.5A; Frequency
INDUCTOR, AXIAL, 100UH; Inductor type:Choke; Inductance:100uH; Tolerance, inductance: /-20%; Resistance:0.65R; Current, DC max:1A; Frequency, resonant:55MHz; Case style:Axial; Material, core:Ferrite; Tolerance, :20%; Tolerance, RoHS Compliant: Yes
INDUCTOR, AXIAL, 56UH; Inductor type:Choke; Inductance:56uH; Tolerance, inductance: /-20%; Resistance:0.3R; Current, DC max:1.5A; Frequency, resonant:70MHz; Case style:Axial; Material, core:Ferrite; Tolerance, :20%; Tolerance, RoHS Compliant: Yes
|
意法半导
|
| 2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
|
TOSHIBA
|
| 2000-6R8-H-RC 2000-3R3-V-RC 2000-1R2-V-RC 2000-5R6 |
Toroidal Inductor; Series:2000; Inductance:6.8uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Current Rating:7.2A; Leaded Process Compatible:Yes; Resistance:13mohm 1 ELEMENT, 6.8 uH, GENERAL PURPOSE INDUCTOR
Inductor, Toroidal 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR
Inductor, Toroidal 1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2000; Inductance:5.6uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Current Rating:9.7A; Leaded Process Compatible:Yes; Resistance:6.9mohm
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR
Low radiation High operation frequency
Toroidal Inductor; Series:2000; Inductance:1.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Current Rating:2.2A; Leaded Process Compatible:Yes; Resistance:1.7mohm
1 ELEMENT, 0.5 uH, GENERAL PURPOSE INDUCTOR
|
Bourns, Inc.
BOURNS INC
Bourns Electronic Solutions
|
| Q62702-B915 BBY57-02W BBY5702W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
