| PART |
Description |
Maker |
| 8655PHRA2501 8655PHRAXX01 |
D-SUB PLASTIC SHELLS
|
FCI-CONNECTOR[FCI connector]
|
| CY7C10191B CY7C10191B-10VC CY7C1019B-12ZC CY7C1019 |
128K x 8 Static RAM 128K的8静态RAM
SOLDER SHELLS FOR 25-POSITION FEMALE D-SUBMINIATURE CONNECTORS, PACKAGE OF 10 128K X 8 STANDARD SRAM, 15 ns, PDSO32
SOLDER SHELLS FOR 25-POSITION MALE D-SUBMINIATURE CONNECTORS, PACKAGE OF 50 128K X 8 STANDARD SRAM, 15 ns, PDSO32
HD15M WATERPROOF D-SUB BACKSHELL KIT
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| 8655MHRA0901KLF 8655MHRA0902KLF 8655MHRA0901LF 865 |
d-sub metal shells
|
FCI connector
|
| KT837L15 KT837W15 KT837L55 KT837L51 KT837W51 KT837 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells . Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
|
Optek Technology
|
| BYV118F BYV118F-35 BYV118F-40 BYV118F-45 BYV118X B |
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 10 A, 40 V, SILICON, RECTIFIER DIODE
DB-25 MALE CONN KIT CRIMP 10 A, 40 V, SILICON, RECTIFIER DIODE
CRIMP SHELLS DB25 MALE 10 A, 35 V, SILICON, RECTIFIER DIODE
Rectifier diodes Schottky barrier 10 A, 35 V, SILICON, RECTIFIER DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SFH250V SFH250 |
Plastic Fiber Optic Photodiode Detector Plastic Connector Housing
|
INFINEON[Infineon Technologies AG]
|
| BGA-320P-M06 |
PLASTIC BALL GRID ARRAY PACKAGE 320 PIN PLASTIC
|
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
|
| 24C02C_SN 24C02C-I/P 24C02C-I/SN 24C02C-I/ST 24C02 |
SERIAL EEPROM|256X8|CMOS|TSSOP|8PIN|PLASTIC 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
Soft Microcontroller Module
SERIAL EEPROM|256X8|CMOS|DIP|8PIN|PLASTIC
SERIAL EEPROM|256X8|CMOS|SOP|8PIN|PLASTIC
EconoRAM
SERIALEEPROM|256X8|CMOS|SOP|8PIN|PLASTIC
|
Microchip Technology, Inc.
|
| CMPSH-3A |
0.1 A, 30 V, SILICON, SIGNAL DIODE ROHS COMPLIANT, PLASTIC PACKAGE-3
SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE
|
Rectron Semiconductor
|
| PALLV22V10-10JC PALLV22V10-10PC |
EE PLD, 10 ns, PQCC28 PLASTIC, LCC-28
EE PLD, 10 ns, PDIP24 0.300 INCH, SKINNY, PLASTIC, DIP-24
|
Vantis, Corp.
|
