PART |
Description |
Maker |
2DI300A-050 |
Power Transister Module
|
Fuji Electric
|
EMT51 |
General purpose transister
|
ROHM
|
2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) From old datasheet system Medium Power Transistor (-50V, -1A)
|
ROHM
|
SBM82314X SBM82314 SBM82314Z SBM81314G SBM81314N S |
Medium Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving From old datasheet system Transceiver Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving Components and FTTx solutions - Tx 1550nm/Rx 1310nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc. Agilent (Hewlett-Packard)
|
2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 MEDIUM POWER TRANSISTOR 中功率晶体管
|
??『绉???′唤?????? UNISONIC TECHNOLOGIES CO LTD Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving Transceiver Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving 中功率比迪光学标准模1310纳米发光,纳米接1310
|
INFINEON[Infineon Technologies AG]
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏,1安PNP型中等功率晶体管 Si, POWER TRANSISTOR 45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤?????? UNISONIC TECHNOLOGIES CO LTD Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|