PART |
Description |
Maker |
SMV1231-011 |
Hyperabrupt Tuning Varactors S BAND, 0.97 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
KV2161-00 KV2121 KV2121-00 KV2151-00 KV2131-00 KV2 |
C BAND, 4.9 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Microwave Hyperabrupt Junction
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
KV1401 KV1801 KV1501 KV1501-17 KV1601 |
VARACTOR DIODES HF/VHF Super Hyperabrupt Junction TM VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation http:// MICROSEMI CORP-LOWELL
|
D1022UK D1022 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
D1017UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端)) METAL GATE RF SILICON FET
|
Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D1028UK D1028 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽) METAL GATE RF SILICON FET
|
Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D2007UK D2007 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited
|
BBY59-02V BBY59 |
Latest Silicon Discretes - Hyperabrupt Varactordiode for VCO applications Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
KV390107 |
SILICON HYPERABRUPT TUNING DIODE
|
Advanced Semiconductor
|