| PART |
Description |
Maker |
| KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| ASIDKV6520-12 DKV652012 ASI30291 DKV6520-12 |
SILICON HYPERABRUPT VARACTOR DIODE VHF-UHF BAND, 20 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KV1401 KV1801 KV1501 KV1501-17 KV1601 |
VARACTOR DIODES HF/VHF Super Hyperabrupt Junction TM
VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
http://
MICROSEMI CORP-LOWELL
|
| D1017UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2008UK D2008 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| Q62702-B195 BBY35F Q62702-A775 |
From old datasheet system
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
SCREWDRIVER SET, 7 PCSCREWDRIVER SET, 7 PC; Kit contents:Slotted 75 4mm, 100 5.5mm, 150 6.5mm, Parallel 75 3mm, Phillips 60 No.0, 80 No.1, 100 No.2
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) 硅肖特基二极管（搅拌机应用甚高频/超高频范围高速开关）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
ADVANCED SEMICONDUCTOR INC
|
| BBY53-02L BBY53-02V BBY53-03L BBY53-05W BBY53 BBY5 |
Varactordiodes - Silicon high Q hyperabrupt dual tuning diode
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode 硅调谐二极管
|
http://
INFINEON[Infineon Technologies AG]
|
| D2001UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-28V-1GHz,Single Ended)(???澶??DMOS灏??纭?????绠?2.5W-28V-1GHz,???寮?)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SC4524C |
28V 2A Step-Down Switching Regulator Wide input range: 3V to 28V
|
Semtech Corporation
|
