Part Number Hot Search : 
NLSV4T NCP1395A MP2305DS 80960 TCMZ3V9 HM514 SK902 TLFGE19T
Product Description
Full Text Search

ZC829 - SILICON 28V HYPERABRUPT VARACTOR DIODES

ZC829_671877.PDF Datasheet

 
Part No. ZC829 ZC829ATA
Description SILICON 28V HYPERABRUPT VARACTOR DIODES

File Size 144.33K  /  7 Page  

Maker


Zetex Semiconductors



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: ZC835A
Maker:
Pack: SOT23
Stock: Reserved
Unit price for :
    50: $0.13
  100: $0.12
1000: $0.12

Email: oulindz@gmail.com

Contact us

Homepage http://www.zetex.com/
Download [ ]
[ ZC829 ZC829ATA Datasheet PDF Downlaod from Datasheet.HK ]
[ZC829 ZC829ATA Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for ZC829 ]

[ Price & Availability of ZC829 by FindChips.com ]

 Full text search : SILICON 28V HYPERABRUPT VARACTOR DIODES
 Product Description search : SILICON 28V HYPERABRUPT VARACTOR DIODES


 Related Part Number
PART Description Maker
SMV1231-011 Hyperabrupt Tuning Varactors S BAND, 0.97 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Skyworks Solutions, Inc.
KV2161-00 KV2121 KV2121-00 KV2151-00 KV2131-00 KV2 C BAND, 4.9 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Microwave Hyperabrupt Junction
MICROSEMI CORP-LOWELL
Microsemi Corporation
KV1401 KV1801 KV1501 KV1501-17 KV1601 VARACTOR DIODES HF/VHF Super Hyperabrupt Junction TM
VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Microsemi Corporation
http://
MICROSEMI CORP-LOWELL
D1022UK D1022 Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
D1017UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端))
METAL GATE RF SILICON FET
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
D1028UK D1028 Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽)
METAL GATE RF SILICON FET
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
D2005UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
D2007UK D2007    METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
BBY59-02V BBY59 Latest Silicon Discretes - Hyperabrupt Varactordiode for VCO applications
Silicon Tuning Diode
INFINEON[Infineon Technologies AG]
KV390107 SILICON HYPERABRUPT TUNING DIODE
Advanced Semiconductor
 
 Related keyword From Full Text Search System
ZC829 DATASHEET PDF ZC829 interface ZC829 quad op amp ZC829 Audio ZC829 specifications
ZC829 Positive ZC829 regulator ZC829 Instruments ZC829 baumer ivo gxmmw ZC829 Integrated
 

 

Price & Availability of ZC829

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.87215399742126