| PART |
Description |
Maker |
| NE6500379A-T1 NE6500379A |
3W, L/S-BAND MEDIUM POWER GaAs MESFET
|
Duracell
California Eastern Labs
|
| CFC0301 |
22.5 dBm, medium power GaAs FET
|
CELERITEK
|
| HMC-AUH318 |
GaAs HEMT MMIC MEDIUM POWER GaAs HEMT MMIC MEDIUM POWER
|
Hittite Microwave Corporation
|
| FLL107ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| HMC608LC4 |
GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz
|
Hittite Microwave Corporation
|
| FLL177 FLL177ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
Fujitsu Limited
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| FLL400IP-2 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| TC1101V |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| HMC28100 HMC281 |
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
|
Hittite Microwave Corporation
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| HMC283 |
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
|
Hittite Microwave Corporation
|
