PART |
Description |
Maker |
FPD2250SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
FP1510SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
LP1500SOT89 |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
EB750DFN-BA EB750DFN-BB EB750DFN-BC EB750DFN-BE FP |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
FPD1500SOT89CE FPD1500SOT89 EB1500SOT89E-BG EB1500 |
Si, N-CHANNEL, RF POWER, HEMFET LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
RF MICRO DEVICES INC Filtronic Compound Semiconductors
|
SPF-2000 |
Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
|
SIRENZA[SIRENZA MICRODEVICES]
|
Q62702-G0116 CFH400 |
PCS CDMA & UMTS P-HEMT Transistor Low-Noise, High-Linearity Packaged pHEMT FET 低噪声,高线性度包装pHEMT制场效应 From old datasheet system
|
TriQuint Semiconductor, Inc. TriQuint Semiconductor,Inc.
|
RC0402FR-07220RL MMG20271HT1 GRM155R61A104K01D GJM |
Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier
|
Freescale Semiconductor, Inc
|
AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... 50W High Linearity Low Noise Wideband Gain Block From old datasheet system Gain Block Amplifiers
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
AGB3312 AGB3312S24Q1 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block 50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block Gain Block Amplifiers 50з High Linearity Low Noise Internally Biased Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|
LPV1500 |
PACKAGED LOW NOISE PHEMT 1 W Power PHEMT
|
Filtronic Compound Semi... FILTRONIC[Filtronic Compound Semiconductors]
|