PART |
Description |
Maker |
IS62LV25616LL |
256K x 16 Low Voltage, Ultra Low Power CMOS SRAM(256K x 16 低压,极低功耗CMOS静态RAM)
|
Integrated Silicon Solution, Inc.
|
IS62WV2568BLL-55BLI IS62WV2568ALL-70BI IS62WV2568B |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PBGA36 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
IS62WV25616DALL/DBLL IS65WV25616DBLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
BS62UV2001TI BS62UV2001 BS62UV2001SC BS62UV2001SI |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
|
BSI[Brilliance Semiconductor]
|
MAX6332UR20D3-T MAX6333UR20D3-T MAX6334UR20D3-T MA |
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 20ms. 3-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits 3-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits 3-Pin Ultra-Low-Voltage Low-Power P Reset Circuits From old datasheet system 3-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits 3-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits TV 79C 79#22D SKT RECP 3引脚,超低电压,低功耗レP复位电路 Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor http:// Maixm MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc. Maxim Integrated Produc...
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LP62S2048AM-55LLT LP62S2048AM-70LLT LP62S2048A-T L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM CAC 3C 3#12 PIN PLUG
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位(为512k × 8/256K × 16)低压快闪记忆体
|
Hynix Semiconductor, Inc.
|
N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR AMI[AMI SEMICONDUCTOR]
|
27LV256-20IL 27LV256-20IP 27LV256-20SO 27LV256 27L |
256K (32Kx8) low-voltage CMOS EPROM 256K (32K x 8) Low-Voltage CMOS EPROM 256K2K的8)低电压的CMOS存储 256K (32K x 8) Low-Voltage CMOS EPROM(3.0~5.5V,256K浣?CMOS EPROM)
|
MICROCHIP[Microchip Technology] Microchip Technology Inc. Microchip Technology, Inc.
|
N04L63W1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 16 bit
|
ON Semiconductor
|