PART |
Description |
Maker |
EM4469V0WS6 EM4469V0WT11 EM4469V0WS11 EM4469V0WS7 |
512 bit Read/Write Contactless Identification Device
|
EM Microelectronic-Marin SA
|
EM4550A6WW11 EM4550A5WS11 EM4550A6WS11 EM4550A6WS1 |
1 KBit Read/Write Contactless Identification Device
|
http:// EMMICRO[EM Microelectronic - MARIN SA] EM Microelectronic - MA...
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AM29BDD160GB65A AM29BDD160GT65A AM29BDD160G AM29BD |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
AMD[Advanced Micro Devices]
|
EM4450A5WS7 EM4450A5WW6E EM4450A5WS7E EM4550A5WS11 |
1 KBit Read/Write Contactless Identification Device 1千位写非接触式识别装
|
EM Microelectronic
|
EM4150A5WS7 EM4150A5WP21E EM4350A5WP21E EM4150A6WP |
1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE 1千位写非接触式识别装
|
EM Microelectronic
|
AM29BDD160GB17CPBE AM29BDD160GB17CPBF AM29BDD160GB |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪
|
Advanced Micro Devices, Inc.
|
BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier Read /Write amplifier for FDD Read / Write Amplifier for FDD(FDD的读/写放大器)
|
ROHM[Rohm] Rohm CO.,LTD.
|
S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品(MCP)的512兆位2兆16位)的CMOS 1.8伏,只有同时写,突发模式闪存
|
Spansion Inc. Spansion, Inc.
|
AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
EM4033 |
64 bit Read Only ISO15693 Standard Compliant Contactless Identification Device
|
EM Microelectronic - MA... EM Microelectronic - MARIN SA
|