PART |
Description |
Maker |
HMD8M32M4EG-5 HMD8M32M4EG-6 HMD8M32M4EG |
32Mbyte(8Mx32) 72-pin EDO Mode 4K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
HMD8M32F4E-5 HMD8M32F4E-6 HMD8M32F4E |
32Mbyte(8Mx32) EDO Mode 4K Ref. 100Pin SMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
HMD4M36M3EG HMD4M36M3EG-5 HMD4M36M3EG-6 HMD4M36M3E |
16Mbyte(4Mx36) 72-pin SIMM EDO with Parity MODE, 4K Ref. 5V
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
HCPMEM-512 |
EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG http:// Siemens Semiconductor Group
|
HYB514405BJL-70 HYB514405BJL-60 HYB514405BJL-50 HY |
1M x 4 Bit EDO DRAM 5 V 70 ns 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40 DRAM / FAST PAGE MODE TYPE 262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD OKI electronic componets
|
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
M5M467405DTP-5S M5M465165DTP-6S M5M467805DTP-5S M5 |
4M X 16 EDO DRAM, 50 ns, PDSO50 EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 江户模式67108864位(16777216 - Word位)动态随机存储器
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
MSM5116405C MSM5116405C-50TS-L |
4M X 4 EDO DRAM, 50 ns, PDSO24 4M×4 Dynamic RAM(4M×4动态RAM) 4米4动态RAM米4动态内存) From old datasheet system 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI ELECTRIC INDUSTRY CO LTD OKI SEMICONDUCTOR CO., LTD.
|
IS41LV16256-35K IS41LV16256-35T IS41LV16256-60K IS |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu... Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|