| PART |
Description |
Maker |
| FDB2570 KDB2570 |
22 A, 150 V. RDS(ON) = 80 m VGS = 10 V Fast switching speed Low gate charge
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| SI4410DY |
RDS(ON) 0.0135 VGS=10V Low gate charge. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| HLMP-UL07 HLMP-UL14 HLMP-UG06 HLMP-UH06 HLMP-DL08 |
T-13/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
T-1 - 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
High-Speed Fully Differential Amplifier, /-5 V 8-MSOP-PowerPAD -40 to 85
High-Speed Fully Differential Amplifier, /-5 V 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SON -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SOIC -40 to 85
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP-PowerPAD -40 to 85
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 10x31.5 mm; Packaging: Bulk
Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-SOIC -40 to 85
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| 2SD1624 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM50C1A-XXF RM50DA/CA/C1A-XXF RM50CA-XXF RM50DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| 2SK2503 |
Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Easy to parallel.
|
TY Semiconductor Co., Ltd
|
| AP2532GY |
Low Gate Charge, Fast Switching Performance
2.4 A, 30 V, 0.13 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
|
| GDSSF22A5E-15 |
Main Product Characteristics
Low Gate Charge for Fast Switching
|
GOOD-ARK Electronics
|
| BAW101-7 BAW101-15 |
Fast Switching Speed
DUAL SURFACE MOUNT SWITCHING DIODE
|
Diodes Incorporated
|
| BAS19-AU BAS16-AUA000001 BAS16-AUA010001 BAS16-AUA |
SURFACE MOUNT SWITCHING DIODES Fast switching speed
|
Pan Jit International Inc.
Pan Jit International I...
|
