PART |
Description |
Maker |
M13S128168A |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
M13S2561616A1 M13S2561616A-5BIG M13S2561616A-5TIG |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Mem... Elite Semiconductor Memory Technology Inc. http://
|
M13S64164A09 M13S64164A-5TG M13S64164A-6BG M13S641 |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc. Elite Semiconductor Mem...
|
M13S128168A-5BIG M13S128168A-5TIG M13S128168A-6BIG |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
M13S128168A-5TG |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM 200万16位4个银行双倍数据速率SDRAM
|
Electronic Theatre Controls, Inc.
|
W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM Low Power SDRAM Industrial SDRAM 2M x 4 BANKS x 16 BIT SDRAM DRAM - Datasheet Reference
|
Winbond Electronics Corp WINBOND[Winbond]
|
K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D2616 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 200万16 × 4,银行双数据速率同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
AS4DDR32M16 |
8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
MSM27C3255CZ |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
MR27V3255D |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 8-Double Word x 32-Bit or 16-Word x 16-Bit Page Mode One Time PROM
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM Double Data Rate architecture; two data transfers per clock cycle 4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond WINBOND ELECTRONICS CORP
|