| PART |
Description |
Maker |
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PHB55N03LTA PHD55N03LTA PHP55N03LTA |
N-channel enhancement mode field-effect transistor 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel enhancement mode field-effect transistor 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MRF6S19100HR308 MRF6S19100HSR3 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
Freescale Semiconductor...
|
| H01N45A |
N-channel High Voltage MOSFET
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
|
| MRF6P23190H08 MRF6P23190HR6 |
RF Power Field Effect Transistor
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
|
| H01N60 H01N60J H01N60I |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
|
| H01N60S H01N60SJ H01N60SI |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
|
| H07N65 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
