| PART |
Description |
Maker |
| GS8644Z18 GS8644Z18E-200I GS8644Z18E-225 GS8644Z18 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC[ETC]
GSI Technology
|
| GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
| GS86422V72 GS8642V36 GS8642V18 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS8640E18T-200IV GS8640E18T-250V GS8640E18T-200V G |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS864018T-XXX |
(GS8640xxT) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
| GS864218B-167IV GS864218B-167V GS864218B-200IV GS8 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS864418E-200 GS864418E-200I GS864418E-133 GS86441 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8640Z18T-250I GS8640Z18T GS8640Z18T-167 GS8640Z1 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| K7J641882M |
(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification
|
Samsung semiconductor
|
| GS864436E-166V GS864418E-150 GS864418E-225 GS86443 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
