| PART |
Description |
Maker |
| GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM
150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM
200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
| MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST
36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆
36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
| GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS832018 GS832018T-133 GS832018T-133I GS832018T-15 |
36Mb Burst SRAMs
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
ETC
GSI[GSI Technology]
|
| GS832118 |
36Mb Burst SRAMs
|
GSI Technology
|
| GS8342D08E-250 GS8342D08E-250I GS8342D08E-333 GS83 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8321V18E-166 GS8321V36GE-250 GS8321V36GE-250I GS |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8342Q36E-300 GS8342Q08E-200 GS8342Q08GE-200I GS8 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8342D09E-250I GS8342D09GE-200I GS8342D09E-167I G |
36Mb SigmaQuad-II Burst of 4 SRAM
36Mb SigmaQuad-II Burst of 4 SRAM 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165
|
Sanyo Denki Co., Ltd.
GSI Technology, Inc.
|
| GS8322ZV18B-250 GS8322ZV18E-150I GS8322ZV18GB-150 |
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8320ZV18T-250 GS8320ZV18T-250I GS8320ZV18T-225 G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
