| PART |
Description |
Maker |
| CTA2P1N CTA2P1N-7 CTA2 |
COMPLEX TRANSISTOR ARRAY
|
Diodes Inc.
DIODES[Diodes Incorporated]
|
| CTA2P1N-7-F |
COMPLEX TRANSISTOR ARRAY
|
Diodes Inc.
|
| DRDP006W DRDN005W DRDNS26W |
(DRD xxxx W) Complex Array for Relay Drivers
|
Diodes
|
| EMX28 |
Low frequency transistor, complex (2-elements) Bipolar Transistor
|
Rohm CO.,LTD.
|
| LC4256 LC4384V75T176C LC4512 LC4128 LC4064 LC4032 |
IC,COMPLEX-EEPLD,256-CELL,3.8NS PROP DELAY,QFP,100PIN,PLASTIC
IC,COMPLEX-EEPLD,384-CELL,10NS PROP DELAY,QFP,176PIN,PLASTIC
IC,COMPLEX-EEPLD,512-CELL,4.5NS PROP DELAY,QFP,176PIN,PLASTIC
System Programmable Super Fast High Density PLDs
IC,COMPLEX-EEPLD,64-CELL,3.2NS PROP DELAY,QFP,100PIN,PLASTIC
IC,COMPLEX-EEPLD,32-CELL,3.2NS PROP DELAY,TQFP,48PIN,PLASTIC
|
Lattice Semiconductor Corp
|
| BC817U |
General Purpose Transistors - NPN Silicon AF Transistor Array for AF input stages and drivers
NPN Silicon Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| FMS7G20US60 |
600V, 20A IGBT Module (Compact & Complex Type)
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| MUBW6-06A6 |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 7A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|7A我（丙）
|
Cooper Bussmann, Inc.
|
| MIG20J806HA |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 25A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|5A一（c
|
Toshiba, Corp.
|
| SUR522H |
Epitaxial Planar Type NPN Silicon Transistor 外延型NPN硅平面晶体管
Digital TR > Complex Type
|
Toshiba, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
AUK Corp
|
|
