| PART |
Description |
Maker |
| VSMY2850G VSMY2850RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSMY12850 |
High Speed Infrared Emitting Diodes, 850 nm,Surface Emitter Technology
|
Vishay Siliconix
|
| VSMY3850-GS08 VSMY3850-GS18 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSLY5850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| SFH4252 |
High Power Infrared Emitter (850 nm)
|
OSRAM GmbH
|
| SFH4050 |
High Power Infrared Emitter (850 nm)
|
OSRAM GmbH
|
| SFH4203 |
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter
|
OSRAM GmbH
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MTE9460MT |
Peak Emission Wavelength: 950nm
High Power Infrared Emitter
|
Marktech Corporate
|
| ASDL-4860-C22 |
High Power Infrared Emitter (850nm) in Surface Mount Package
|
AVAGO TECHNOLOGIES LIMITED
|
