| PART |
Description |
Maker |
| KP027J P0120007P |
250mW GaAs Power FET (Pb-Free Type)
|
Eudyna Devices Inc
|
| KP028J |
1W GaAs Power FET (Pb-Free Type)
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| RJJ0315DPA RJJ0315DPA-00-J53 |
Silicon P Channel Power MOS FET High Speed Power Switching
35 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
| RJK0210DPA RJK0210DPA-00-J53 |
Silicon N Channel Power MOS FET Power Switching
40 A, 25 V, 0.0074 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN
|
http://
|
| RJK0381DPA-00-J53 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
40 A, 30 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| CFH2162-P3 |
Power GaAs FET
|
Mimix Broadband
|
| CFH2162-P5 |
Power GaAs FET
|
Mimix Broadband
|
| CFK2162-P3 |
Power GaAs FET
|
Celeritek
|
