| PART |
Description |
Maker |
| KP029J P0120009P |
2W GaAs Power FET (Pb-Free Type)
|
EUDYNA[Eudyna Devices Inc]
|
| KP028J P0120008P |
1W GaAs Power FET (Pb-Free Type)
|
Eudyna Devices Inc
|
| KP023J P0120003P |
800mW GaAs Power FET (Pb-Free Type)
|
EUDYNA[Eudyna Devices Inc]
|
| MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY
L /S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
LS BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0907B 0907B MGF0907 |
L,S BAND POWER GaAs FET
From old datasheet system
L, S BAND POWER GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RJK0210DPA RJK0210DPA-00-J53 |
Silicon N Channel Power MOS FET Power Switching
40 A, 25 V, 0.0074 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN
|
http://
|
| NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
ETC
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
