| PART |
Description |
Maker |
| SG35N12T SG35N12DT |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| SG12N06DP SG12N06P |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT50MR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| IRGPC50M |
Insulated Gate Bipolar Transistors (IGBTs)(??矾棰??瓒?揩???缂?????????朵?绠?
600V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IXBH15N160 IXBH15N140 |
From old datasheet system
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| 232266296209 232266296724 232266296624 |
PTC Thermistors For Degaussing Dual Mono And Double Mono Cased
|
Vishay
|
| SGW10N60 SGW10N60A SGB10N60A SGP10N60A |
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 10A 600V TO220AB IGBT
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 10A 600V TO247AC IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| PMMK150D-C PMMK150D-A PMMK150D-B PMMK150S-24 PMMK1 |
Medical Grade 150 Watt Open Frame with PFC
AP,MONO,10PF,100V,5%,NPO INCREMENTS of 10
CABLE,SYS K/B TO SWITCH BOX,2' 6PM-mDIN,6P-mDIN FOR 79177
CAP,MONO,33PF,100V,5%,NPO -10
AP,MONO,22PF,100V,5%,NPO INCREMENTS of 10 医药50瓦的功率因数校正开放框
|
Astrodyne, Inc.
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
